N-Channel MOSFET
Main Product Characteristics:
VDSS
600V
RDS(on) 0.69ohm(typ.)
ID 10A
Features and Benefits:
TO220F
Advanced MOS...
Description
Main Product Characteristics:
VDSS
600V
RDS(on) 0.69ohm(typ.)
ID 10A
Features and Benefits:
TO220F
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF10N60F
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=14.2mH Avalanche Current @ L=14.2mH Operating Junction and Storage Temperature Range
Max. 10 6 40 156 1.2 600 ± 30 700 10
-55 to + 150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.06.26 www.silikron.com
Version : 1.2
page 1 of 8
SSF10N60F
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0.8 62 40
...
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