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2CL3509H

SiPower

High Voltage Diodes

Power Semiconductor Technology 2CL3509H 2CL3512H High Voltage Diodes for Micro-Wave Oven Features IF AV 350mA VRRM 9kV...


SiPower

2CL3509H

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Power Semiconductor Technology 2CL3509H 2CL3512H High Voltage Diodes for Micro-Wave Oven Features IF AV 350mA VRRM 9kV ,12kV High reliability Applications Rectification for high voltage power supply of magnetron in Micro wave oven and others Outline Dimensions and Mark Unit mm Code Lot No. 7.5 0.5 Cathode Mark 1.2 0.03 22min 22 0.5 22min . . Limiting Values Absolute Maximum Rating Item Symbol Unit Type 2CL3509H 2CL3512H 2CL3509H Code T3509H T3512H Cathode Mark 2CL3512H Repetitive Peak Reverse Voltage VRRM kV 9 12 Average Forward Current IF(AV) mA 350 (50HZHalf-sine wave, Resistance load, Ta 60 ) Forward Surge Current IFSM A 30 50HZHalf-sine wave,1cycle,Ta=25 Reverse Surge Current IRSM mA 100 (WP=1ms, Rectangular-wave, One-shot, Ta=25 ) Virtual Junction Temperature T(vj) 130 Storage Temperature Tstg -40 ~ +130 Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm 50mm 0.6mm Wind-cooled velocity is more than 0.5m/s Electrical Characteristics Ta=25 Unless otherwise specified Item Symbol Unit Test Condition Peak Forward Voltage Peak Reverse Current VFM IRRM1 V A IFM=350mA VRM=VRRM Avalanche Breakdown Voltage V BR kV IR=100 A 2CL3509H 2CL3512H 10 12 5 9.5 12.5 SiPower - The official marketing arm of Zhonghuan Semiconductor http://www.sipower-inc.com Power Semiconductor Technology 2CL3509H 2CL3512H High Voltage Diodes for Micro-Wave Oven Characteristics(Typical) 400 Ta =25 300 200 2CL3...




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