High Voltage Diodes
Power Semiconductor Technology
2CL3509H 2CL3512H
High Voltage Diodes for Micro-Wave Oven
Features
IF AV 350mA VRRM 9kV...
Description
Power Semiconductor Technology
2CL3509H 2CL3512H
High Voltage Diodes for Micro-Wave Oven
Features
IF AV 350mA VRRM 9kV ,12kV High reliability
Applications
Rectification for high voltage power supply of magnetron in Micro wave oven and others
Outline Dimensions and Mark
Unit mm
Code Lot No.
7.5 0.5
Cathode Mark
1.2 0.03
22min
22 0.5
22min
.
.
Limiting Values Absolute Maximum Rating
Item Symbol Unit
Type 2CL3509H 2CL3512H
2CL3509H
Code T3509H T3512H
Cathode Mark
2CL3512H
Repetitive Peak Reverse Voltage
VRRM
kV
9
12
Average Forward Current
IF(AV) mA 350
(50HZHalf-sine wave, Resistance load, Ta 60 )
Forward Surge Current
IFSM A 30
50HZHalf-sine wave,1cycle,Ta=25
Reverse Surge Current
IRSM mA 100
(WP=1ms, Rectangular-wave, One-shot, Ta=25 )
Virtual Junction Temperature
T(vj)
130
Storage Temperature
Tstg
-40 ~ +130
Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm 50mm 0.6mm Wind-cooled velocity is more than 0.5m/s
Electrical Characteristics Ta=25 Unless otherwise specified
Item Symbol Unit Test Condition
Peak Forward Voltage Peak Reverse Current
VFM IRRM1
V A
IFM=350mA VRM=VRRM
Avalanche Breakdown Voltage
V BR
kV
IR=100 A
2CL3509H
2CL3512H
10 12
5
9.5 12.5
SiPower - The official marketing arm of Zhonghuan Semiconductor
http://www.sipower-inc.com
Power Semiconductor Technology
2CL3509H 2CL3512H
High Voltage Diodes for Micro-Wave Oven
Characteristics(Typical)
400 Ta =25
300
200
2CL3...
Similar Datasheet