DatasheetsPDF.com

1SS420CT

Silicon Diode

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.38 +0.02 -0.03 ...

Toshiba

Download 1SS420CT Datasheet

Similar Datasheet

1SS420 Silicon Diode - Toshiba
1SS420CT Silicon Diode - Toshiba

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)