1SS421

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Low forward voltage: VF (3) = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P* 30 V 300 mA 200 mA 1A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Cu pad dimension of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 1.4 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT Test Circuit Test Condition ― IF = 1 mA ― IF = 5 mA ― IF = 200 ...