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1SS417CT
Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial
Schottky
Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) 0.6±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Un...
Toshiba
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