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1SS416CT

Toshiba
Part Number 1SS416CT
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT 1SS416CT High Speed Switching Application z Small packa...
Datasheet PDF File 1SS416CT PDF File

1SS416CT
1SS416CT

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.
23 V (typ.
) @IF = 5 mA 0.
6±0.
05 Unit: mm CATHODE MARK 1.
0±0.
05 0.
25±0.
03 0.
25±0.
03 0.
65 0.
05±0.
03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P* 35 V 30 V 200 mA 100 mA 1A 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C *: Mounted on a glass epoxy circuit...


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