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1SS416

Toshiba
Part Number 1SS416
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 1SS416 High Speed Switching Application z Small package z...
Datasheet PDF File 1SS416 PDF File

1SS416
1SS416

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 1SS416 High Speed Switching Application z Small package z Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA 0.
1 0.
6±0.
05 Unit: mm A CATHODE MARK 1.
0±0.
05 0.
8±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.
2 ±0.
05 0.
07 M A 0.
1 0.
1±0.
05 Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA 0.
48 +0.
02 -0.
03 Average forward current IO 100 mA Surge current (10ms) IFSM 1A Power dissipation P * 100 mW Junction temperature Storage temperature range Tj 125 °C Tstg −55∼125 °C fSC Operating temperature range Topr −40∼100 °C ...


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