1SS413
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING
PIN 1 2
DESCRIPTION Catho...
1SS413
SILICON EPITAXIAL
SCHOTTKY BARRIER DIODE
for high speed switching application
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
Q
Top View Marking Code: "Q" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature
Symbol
VRM VR IFM IO IFSM Ptot TJ Ts
Value 25 20 100 50 1 100 125
- 55 to + 125
Unit V V mA mA A
mW OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 50 mA Reverse Current at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz
Symbol VF IR CT
Typ. -
3.9
Max. 0.55 0.5
-
Unit V µA pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
A C
1SS413
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
∠ ALL ROUND
HE D
A
SOD-523
E bp
UNIT A b p C D E HE V
mm
0.70 0.60
0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75
1.7 1.5
0.1
∠
5O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
...