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1SS412

Toshiba

Silicon Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.0 V (typ.) : IR = 0.1 nA (typ.) : CT = 3.0 pF (typ.) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) re...



Toshiba

1SS412

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