DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4920GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simpl...
Description
Advanced Power Electronics Corp.
AP4920GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching ▼ RoHS Compliant & Halogen-Free
D2 D2 D1 D1
SO-8
G2 S2 G1 S1
BVDSS RDS(ON) ID
25V 25mΩ
7A
Description
AP4920 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1
D1
G2 S1
D2 S2
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
25 V
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20 7 5.7 20 2
0.016
V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-amb
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 62.5
Unit ℃/W
Data and specifications subject to change without notice
1 201501093
AP4920GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Mi...
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