Document
Advanced Power Electronics Corp.
AP4800N2
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product
G
Description
AP4800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
D BVDSS RDS(ON) ID
30V 18mΩ
9A
S
D D G
Top view
D D S
D
D
D
S S
DFN 2x2 D D G
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current3 @ VGS=10V Drain Current3 @ VGS=10V Pulsed Drain Current1 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30 +20
9 7.2 40 2.4 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 52
Unit ℃/W
1 201503171
AP4800N2
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=9A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=5A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V
.VGS=0V
VDS=15V f=1.0MHz f=1.0MHz
30 - - V
- 14 18 mΩ
- 20 30 mΩ
1 1.5 3 V
- 24 -
S
- - 10 uA
- - +30 uA
- 7 11.2 nC
- 1.8 - nC
- 3 - nC
- 5 - ns
- 19 - ns
- 15 - ns
- 19 - ns
- 800 1280 pF
- 105 - pF
- 75 - pF
- 1.3 2.6 Ω
Source-Drain Diode
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge
Test Conditions IS=2A, VGS=0V
IS=9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 13 - ns - 5 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 250oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP4800N2
ID , Drain Current (A)
RDS(ON) (mΩ)
60
T A = 25 o C
50
40
30
10V 7.0V 6.0V 5.0V V G = 4.0V
20
10
0 012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
40
T A = 150 o C
10V 7.0V
6.0V
30 5.0V
V G = 4.0V
20
10
0 012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Normalized RDS(ON)
22 2.0
ID=5A
ID=9A
T A =25 ℃
V G = 10 V
20
1.6
18
. 1.2
16
0.8 14
12 2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
0.4 -100
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
I D =250uA
1.6
150
Normalized VGS(th)
6
4 T j =150 o C T j =25 o C
1.2 0.8
2 0.4
0 0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.4
0.0 -100 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
IS(A)
AP4800N2
8
I D = 5A V DS =15V
6
4
C (pF)
f=1.0MHz
1600
1200
C iss
800
VGS , Gate to Source Voltage (V)
ID (A)
2
0 0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
400
C oss C0
1 5 9 13 17 21 25 29 33rss 37
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
Operation in this area limited by RDS(ON)
10
100us 1 1ms
10ms
100ms
0.1
0.01 0.01
T A =25 o C Single Pulse
1s DC
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
Normalized Thermal Response (Rthja)
1 Duty factor=0.5
0.2 0.1 0.1
0.05
. 0.02 0.01 0.01 Single Pulse
PDM t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 250℃/W
0.001 0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
40
V DS =5V
30
20
T j =150 o C
10
T j =25 o C
T j = -55.