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AP4800N2 Dataheets PDF



Part Number AP4800N2
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4800N2 DatasheetAP4800N2 Datasheet (PDF)

Advanced Power Electronics Corp. AP4800N2 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G Description AP4800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of powe.

  AP4800N2   AP4800N2


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Advanced Power Electronics Corp. AP4800N2 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G Description AP4800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D BVDSS RDS(ON) ID 30V 18mΩ 9A S D D G Top view D D S D D D S S DFN 2x2 D D G Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3 @ VGS=10V Drain Current3 @ VGS=10V Pulsed Drain Current1 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 30 +20 9 7.2 40 2.4 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 52 Unit ℃/W 1 201503171 AP4800N2 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=9A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=5A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V .VGS=0V VDS=15V f=1.0MHz f=1.0MHz 30 - - V - 14 18 mΩ - 20 30 mΩ 1 1.5 3 V - 24 - S - - 10 uA - - +30 uA - 7 11.2 nC - 1.8 - nC - 3 - nC - 5 - ns - 19 - ns - 15 - ns - 19 - ns - 800 1280 pF - 105 - pF - 75 - pF - 1.3 2.6 Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=2A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 13 - ns - 5 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 250oC/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4800N2 ID , Drain Current (A) RDS(ON) (mΩ) 60 T A = 25 o C 50 40 30 10V 7.0V 6.0V 5.0V V G = 4.0V 20 10 0 012345 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain Current (A) 40 T A = 150 o C 10V 7.0V 6.0V 30 5.0V V G = 4.0V 20 10 0 012345 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Normalized RDS(ON) 22 2.0 ID=5A ID=9A T A =25 ℃ V G = 10 V 20 1.6 18 . 1.2 16 0.8 14 12 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 10 8 0.4 -100 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 I D =250uA 1.6 150 Normalized VGS(th) 6 4 T j =150 o C T j =25 o C 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 0.0 -100 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 IS(A) AP4800N2 8 I D = 5A V DS =15V 6 4 C (pF) f=1.0MHz 1600 1200 C iss 800 VGS , Gate to Source Voltage (V) ID (A) 2 0 0 2 4 6 8 10 12 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 400 C oss C0 1 5 9 13 17 21 25 29 33rss 37 V DS , Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics 100 Operation in this area limited by RDS(ON) 10 100us 1 1ms 10ms 100ms 0.1 0.01 0.01 T A =25 o C Single Pulse 1s DC 0.1 1 10 V DS , Drain-to-Source Voltage (V) 100 Fig 9. Maximum Safe Operating Area Normalized Thermal Response (Rthja) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 . 0.02 0.01 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 250℃/W 0.001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) 100 1000 Fig 10. Effective Transient Thermal Impedance 40 V DS =5V 30 20 T j =150 o C 10 T j =25 o C T j = -55.


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