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AP4604P Dataheets PDF



Part Number AP4604P
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4604P DatasheetAP4604P Datasheet (PDF)

Advanced Power Electronics Corp. AP4604P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power appl.

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Advanced Power Electronics Corp. AP4604P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID3 40V 3.7mΩ 140A G D S TO-220(P) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current (Chip) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 40 V +20 V 140 A 80 A 80 A 400 A PD@TC=25℃ PD@TA=25℃ TSTG Total Power Dissipation Total Power Dissipation Storage Temperature Range 150 2.4 -55 to 175 W W ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 1 62 Units ℃/W ℃/W 1 201412181 AP4604P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=32V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=32V VGS=10V VDS=20V ID=40A RG=3.3Ω VGS=10V VGS=0V VDS=25V .f=1.0MHz f=1.0MHz 40 - - V - - 3.7 mΩ 2 - 4V - 118 - S - - 10 uA - - +100 nA - 103 165 nC - 16 - nC - 44 - nC - 20 - ns - 80 - ns - 50 - ns - 32 - ns - 5380 8600 pF - 1020 - pF - 330 - pF - 1.2 - Ω Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=40A, VGS=0V IS=40A, VGS=0V dI/dt=100A/µs Min. Typ. Max. Units - - 1.2 V - 40 - ns - 46 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4604P ID , Drain Current (A) RDS(ON) (mΩ) 400 T C = 25 o C 300 200 10V 9.0V 8.0V 7.0V 6.0V 100 V G =5.0V 0 0 4 8 12 16 V DS , Drain-to-Source Voltage (V) 20 Fig 1. Typical Output Characteristics ID , Drain Current (A) 200 T C = 175 o C 10V 9.0V 160 8.0V 7.0V 6.0V 120 V G =5.0V 80 40 0 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 10 I D =40A T C =25 o C 8 6 . 4 2 4 5 6 7 8 9 10 V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 40 30 T j =175 o C T j =25 o C 20 10 Normalized VGS(th) Normalized RDS(ON) 2.8 I D =40A 2.4 V G =10V 2.0 1.6 1.2 0.8 0.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I D =1mA 1.6 200 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 0 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 200 3 IS(A) AP4604P VGS , Gate to Source Voltage (V) 12 I D = 40 A 10 V DS =32V 8 6 4 2 0 0 40 80 120 Q G , Total Gate Charge (nC) 160 Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 7000 6000 C5000 iss 4000 3000 2000 1000 0 1 C oss C rss 11 21 31 41 V DS ,Drain-to-Source Voltage (V) 51 Fig 8. Typical Capacitance Characteristics ID (A) 1000 Operation in this area limited by RDS(ON) 100 100us 10 1ms 10ms 100ms 1 DC T C =25 o C Single Pulse 0.1 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 0.2 0.1 0.1 . 0.05 0.02 0.01.


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