Document
Advanced Power Electronics Corp.
AP4604P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON) ID3
40V 3.7mΩ 140A
G D S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
40 V +20 V 140 A 80 A 80 A 400 A
PD@TC=25℃ PD@TA=25℃ TSTG
Total Power Dissipation Total Power Dissipation Storage Temperature Range
150 2.4 -55 to 175
W W ℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 1 62
Units ℃/W ℃/W
1 201412181
AP4604P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VDS=VGS, ID=250uA
VDS=10V, ID=40A VDS=32V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=32V VGS=10V VDS=20V ID=40A RG=3.3Ω VGS=10V VGS=0V VDS=25V
.f=1.0MHz
f=1.0MHz
40 - - V
- - 3.7 mΩ
2 - 4V
- 118 -
S
- - 10 uA
- - +100 nA
- 103 165 nC
- 16 - nC
- 44 - nC
- 20 - ns
- 80 - ns
- 50 - ns
- 32 - ns
- 5380 8600 pF
- 1020 - pF
- 330 - pF
- 1.2 -
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge
Test Conditions IS=40A, VGS=0V IS=40A, VGS=0V dI/dt=100A/µs
Min. Typ. Max. Units - - 1.2 V - 40 - ns - 46 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP4604P
ID , Drain Current (A)
RDS(ON) (mΩ)
400
T C = 25 o C
300
200
10V 9.0V 8.0V 7.0V 6.0V
100 V G =5.0V
0 0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
20
Fig 1. Typical Output Characteristics
ID , Drain Current (A)
200
T C = 175 o C
10V 9.0V
160 8.0V
7.0V
6.0V
120 V G =5.0V
80
40
0 0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
I D =40A T C =25 o C
8
6
.
4
2 4 5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =175 o C
T j =25 o C
20
10
Normalized VGS(th)
Normalized RDS(ON)
2.8
I D =40A 2.4 V G =10V
2.0
1.6
1.2
0.8
0.4 -100
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2
I D =1mA
1.6
200
1.2
0.8
0.4
0 0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
0 -100 -50 0 50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
200
3
IS(A)
AP4604P
VGS , Gate to Source Voltage (V)
12
I D = 40 A 10 V DS =32V
8
6
4
2
0 0 40 80 120
Q G , Total Gate Charge (nC)
160
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
7000
6000
C5000 iss
4000
3000
2000
1000
0 1
C oss C rss
11 21 31 41
V DS ,Drain-to-Source Voltage (V)
51
Fig 8. Typical Capacitance Characteristics
ID (A)
1000
Operation in this area limited by RDS(ON)
100
100us
10 1ms
10ms 100ms 1 DC T C =25 o C Single Pulse
0.1 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1 Duty factor=0.5
Normalized Thermal Response (Rthjc)
0.2
0.1 0.1
. 0.05
0.02 0.01.