MAGX-000025-150000

MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  Common-Source Configuration  +50 V Typical Operation  Class AB Operation  RoHS* Compliant and 260°C Reflow Compatible  MTTF = 600 years (TJ < 200 °C) Applications  General purpose for pulsed or CW applications Description The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Functional Schematic MAGX-000025-150000 Rev. V1 Ordering Information Part Number MAGX-000025-150000 MAGX-000025-SB2PPR MAGX-000025-SB1PPR Description Flanged 1200-1400 MHz Evaluation Board 2500 MHz Evaluation Board Pin No. Function 1 Vgg/RF Input 2 Vdd/RF Output 3 Vgg/RF Input 4 Vdd/RF Output * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets a...