MABT-011000

MABT-011000 Integrated Bias Network 2 - 18 GHz Features  Specified over Broad Bandwidth: 2 - 18 GHz  Surface Mount  Extremely Low Insertion Loss: < 0.3 dB  High RF-DC Isolation: > 34 dB  Rugged, Fully Monolithic Glass Encapsulation  RoHS* Compliant and 260°C Reflow Compatible Description The MABT-011000 is a fully monolithic broadband surface mount bias network utilizing MACOM’s patented HMIC process. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity of elements and the combination of silicon and glass give this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies. Large vias reduce inductance and allow part to be more easily soldered, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders. The MABT-011000 bias network is suitable for the DC biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the DC return and contains a series DC blocking capacitor. DC currents up to 60 mA and DC voltages up to 50 V may be used. Functional Schematic B (DC Bias) Rev. V1 Ground J1 (IN) Pin Configuration Pin J1 J2 B J2 (OUT) Function RF Input RF Output DC Bias Ordering Information1 Part Number Package MABT-011000-14230G Gel pack MABT-01...