MAAP-015035

MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz Features  12 W X-Band Power Amplifier  36 dB Small Signal Gain  41 dBm Saturated Pulsed Output Power  40% Power Added Efficiency  On Chip Gate Bias Circuit  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Description The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications. Ordering Information Part Number MAAP-015035-DIE Package Die in Vacuum release gel pack Functional Schematic VG1 VB1 VD1 VG2 1 456 VB2 VB3 9 10 Bias Cct 2,7,11 VG3 VD2 12 13 Rev. V1 VD3 14 RFIN 32 16 RFOUT Bias Cct 21,25,30 31 29 27 26 VG1 VB1 VD1 VG2 23 22 VB2 VB3 20 19 VG3 VD2 18 VD3 Pad Configuration Pad No. Function Pad No. Function 1 VG1 17 GND 2 Bias Circuit GND 18 VD3 3 GND 19 VD2 4 VB1 20 VG3 5 VD1 21 Bias Circuit GND 6 VG2 22 VB3 7 Bias Circuit GND 23 VB2 8 GND 24 GND 9 VB2 25 Bias Circuit GND 10 VB3 26 VG2 11 Bias Circuit GND 27 VD1 12 VG3 28 VB1 13 VD2 29 GND 14 VD3 30 Bias Circuit GND 15 GND 31 VG1 16 RFOUT 32 RFIN * Restrictions on Hazardous Substances, European Union D...