Document
NEW PRODUCT
DMC3036LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Mechanical Data
• Complementary Pair MOSFETs • Low On-Resistance
• N-Channel: 36mΩ @ 10V 61mΩ @ 4.5V
• P-Channel: 36mΩ @ -10V • 64mΩ @ -4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.072g (approximate)
SOP-8L
D2
D1
S2 D2
G2 D2 G2 S1 D1 G1 D1
G1
TOP VIEW
TOP VIEW Internal Schematic
S2 N-Channel MOSFET
Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified
S1 P-Channel MOSFET
Drain Source Voltage Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
TA = 25°C TA = 70°C
Symbol VDSS VGSS
ID
IDM
Value 30
±20
6.9 5.8
24
Unit V V
A
A
Maximum Ratings P-CHANNEL
Drain Source Voltage Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@TA = 25°C unless otherwise specified
TA = 25°C TA = 70°C
Symbol VDSS VGSS
ID
IDM
Value -30
±20
-6 -5
-21
Unit V V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Symbol
PD RθJA TJ, TSTG
Value 2.5 50
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, on 2oz. Copper pads with RθJA = 50°C/W. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Repetitive rating, pulse width limited by junction temperature.
Unit W
°C/W °C
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
1 of 7 www.diodes.com
October 2008
© Diodes Incorporated
NEW PRODUCT
DMC3036LSD
Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge Gate-Drain Charge
Symbol
Min
Typ
Max Unit
Test Condition
BVDSS IDSS IGSS
30 ⎯ ⎯
⎯ ⎯ V VGS = 0V, ID = 250μA
⎯ 1 μA VDS = 24V, VGS = 0V
⎯
± 100
nA VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs| VSD
1
⎯ ⎯
⎯ 0.5
⎯ 28 51 7.7
⎯
2.1 V VDS = VGS, ID = 250μA
36 61
mΩ
VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A
⎯ S VDS = 5V, ID = 6.9A
1.2 V VGS = 0V, IS = 1A
Ciss Coss Crss RG
Qg
Qgs Qgd
⎯ 384 ⎯ 67 ⎯ 48 ⎯ 1.3
⎯
4.3 8.6
⎯ 1.2 ⎯ 2.5
⎯ pF ⎯ pF VDS = 15V, VGS = 0V, f = 1.0MHz ⎯ pF ⎯ Ω VGS = 0V VDS = 0V, f = 1MHz
⎯ ⎯
VDS = 10V, VGS = 4.5V, ID = 10A
nC
VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A
⎯ VDS = 10V, VGS = 10V, ID = 10A
Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS
Symbol Min
BVDSS IDSS IGSS
-30 ⎯ ⎯
VGS(th)
RDS (ON)
|Yfs| VSD
-1
⎯ ⎯
⎯ -0.5
Ciss Coss Crss RG
⎯ ⎯ ⎯ ⎯
Total Gate Charge
Qg ⎯
Gate-Source Charge Gate-Drain Charge
Qgs Qgd
Notes: 5. Short duration pulse test used to minimize self-heating effect.
⎯ ⎯
Typ
⎯ ⎯ ⎯
⎯ 30 53 8.8 ⎯
637 147 105 3.3
6.8 13.7 1.6 4.2
Max
⎯ -1.0 ± 100
-2.2 36 64 ⎯ -1.2
⎯ ⎯ ⎯ ⎯
⎯
⎯ ⎯
Unit Test Condition
V VGS = 0V, ID = -250μA μA VDS = -24V, VGS = 0V nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ
VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A
S VDS =-5V, ID = -6A
V VGS = 0V, IS = -1A
pF pF VDS = -15V, VGS = 0V, f = 1.0MHz pF Ω VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V, VGS = -4.5V, ID = 6A
nC
VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A
VDS = 15V, VGS = -10V, ID = 6A
DMC3036LSD
Document number: DS31311 Rev. 4 - 2
2 of 7 www.diodes.com
October 2008
© Diodes Incorporated
DMC3036LSD
NEW PRODUCT ID, DRAIN CURRENT (A)
30 28 26 24 22 20 18 16 14 12 10
8 6 4 2 00
1
0.1
VGS = 10V
N-CHANNEL
30
24
VDS = 5V Pulsed
VGS = 4.5V
18
TA = -55°C TA = 25°C TA = 85°C
TA = 125°C TA = 150°C
ID, DRAIN CURRENT (A)
VGS = 3.5V
VGS.