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DMC3036LSD Dataheets PDF



Part Number DMC3036LSD
Manufacturers Diodes
Logo Diodes
Description MOSFET
Datasheet DMC3036LSD DatasheetDMC3036LSD Datasheet (PDF)

NEW PRODUCT DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • Complementary Pair MOSFETs • Low On-Resistance • N-Channel: 36mΩ @ 10V 61mΩ @ 4.5V • P-Channel: 36mΩ @ -10V • 64mΩ @ -4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Case: SOP-8L • Case Material: Molded Plastic, “.

  DMC3036LSD   DMC3036LSD



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NEW PRODUCT DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • Complementary Pair MOSFETs • Low On-Resistance • N-Channel: 36mΩ @ 10V 61mΩ @ 4.5V • P-Channel: 36mΩ @ -10V • 64mΩ @ -4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Case: SOP-8L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 6 • Ordering Information: See Page 6 • Weight: 0.072g (approximate) SOP-8L D2 D1 S2 D2 G2 D2 G2 S1 D1 G1 D1 G1 TOP VIEW TOP VIEW Internal Schematic S2 N-Channel MOSFET Maximum Ratings N-CHANNEL @TA = 25°C unless otherwise specified S1 P-Channel MOSFET Drain Source Voltage Gate-Source Voltage Characteristic Drain Current (Note 1) Pulsed Drain Current (Note 4) TA = 25°C TA = 70°C Symbol VDSS VGSS ID IDM Value 30 ±20 6.9 5.8 24 Unit V V A A Maximum Ratings P-CHANNEL Drain Source Voltage Gate-Source Voltage Characteristic Drain Current (Note 1) Pulsed Drain Current (Note 4) @TA = 25°C unless otherwise specified TA = 25°C TA = 70°C Symbol VDSS VGSS ID IDM Value -30 ±20 -6 -5 -21 Unit V V A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 2.5 50 -55 to +150 Notes: 1. Device mounted on FR-4 PCB, on 2oz. Copper pads with RθJA = 50°C/W. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Repetitive rating, pulse width limited by junction temperature. Unit W °C/W °C DMC3036LSD Document number: DS31311 Rev. 4 - 2 1 of 7 www.diodes.com October 2008 © Diodes Incorporated NEW PRODUCT DMC3036LSD Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ V VGS = 0V, ID = 250μA ⎯ 1 μA VDS = 24V, VGS = 0V ⎯ ± 100 nA VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1 ⎯ ⎯ ⎯ 0.5 ⎯ 28 51 7.7 ⎯ 2.1 V VDS = VGS, ID = 250μA 36 61 mΩ VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A ⎯ S VDS = 5V, ID = 6.9A 1.2 V VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qgs Qgd ⎯ 384 ⎯ 67 ⎯ 48 ⎯ 1.3 ⎯ 4.3 8.6 ⎯ 1.2 ⎯ 2.5 ⎯ pF ⎯ pF VDS = 15V, VGS = 0V, f = 1.0MHz ⎯ pF ⎯ Ω VGS = 0V VDS = 0V, f = 1MHz ⎯ ⎯ VDS = 10V, VGS = 4.5V, ID = 10A nC VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A ⎯ VDS = 10V, VGS = 10V, ID = 10A Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Symbol Min BVDSS IDSS IGSS -30 ⎯ ⎯ VGS(th) RDS (ON) |Yfs| VSD -1 ⎯ ⎯ ⎯ -0.5 Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ Total Gate Charge Qg ⎯ Gate-Source Charge Gate-Drain Charge Qgs Qgd Notes: 5. Short duration pulse test used to minimize self-heating effect. ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ 30 53 8.8 ⎯ 637 147 105 3.3 6.8 13.7 1.6 4.2 Max ⎯ -1.0 ± 100 -2.2 36 64 ⎯ -1.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit Test Condition V VGS = 0V, ID = -250μA μA VDS = -24V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = -250μA mΩ VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A S VDS =-5V, ID = -6A V VGS = 0V, IS = -1A pF pF VDS = -15V, VGS = 0V, f = 1.0MHz pF Ω VGS = 0V, VDS = 0V, f = 1MHz VDS = 15V, VGS = -4.5V, ID = 6A nC VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A DMC3036LSD Document number: DS31311 Rev. 4 - 2 2 of 7 www.diodes.com October 2008 © Diodes Incorporated DMC3036LSD NEW PRODUCT ID, DRAIN CURRENT (A) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 00 1 0.1 VGS = 10V N-CHANNEL 30 24 VDS = 5V Pulsed VGS = 4.5V 18 TA = -55°C TA = 25°C TA = 85°C TA = 125°C TA = 150°C ID, DRAIN CURRENT (A) VGS = 3.5V VGS.


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