MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz
Features
GaN Depletio...
MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power
Transistor 10W CW, 30 MHz - 3.5 GHz
Features
GaN Depletion-Mode HEMT Microwave
Transistor
Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years
Description
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power
transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.
The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies.
AOprpdleicriantgioInnsformation1,2
General purpose for pulsed or CW applications: Commercial Wireless Infrastructure (WCDMA,
LTE, WIMAX) Civilian and Military Radar Military and Commercial Communications Public Radio Industrial, Scientific and Medical SATCOM Instrumentation Avionics
Rev. V3
MAGX-000035-010000 (Flanged)
MAGX-000035-01000S (Flangeless)
Ordering Information
Part Number MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR
Package
10 W Ga...