MAGX-000035-010000

MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features  GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching  Broadband Class AB operation  RoHS* Compliant  +50 V Typical Operation  MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies. AOprpdleicriantgioInnsformation1,2 General purpose for pulsed or CW applications:  Commercial Wireless Infrastructure (WCDMA, LTE, WIMAX)  Civilian and Military Radar  Military and Commercial Communications  Public Radio  Industrial, Scientific and Medical  SATCOM  Instrumentation  Avionics Rev. V3 MAGX-000035-010000 (Flanged) MAGX-000035-01000S (Flangeless) Ordering Information Part Number MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR Package 10 W Ga...