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CDBMT230L-G

Comchip

SMD Schottky Barrier Rectifiers

Low VF SMD Schottky Barrier Rectifiers CDBMT220L-G Thru. CDBMT240L-G Reverse Voltage: 20 to 40 Volts Forward Current: 2....


Comchip

CDBMT230L-G

File Download Download CDBMT230L-G Datasheet


Description
Low VF SMD Schottky Barrier Rectifiers CDBMT220L-G Thru. CDBMT240L-G Reverse Voltage: 20 to 40 Volts Forward Current: 2.0 Amp RoHS Device Features -Excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability,low forward voltage drop. -High surge capability. -Guarding for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip,metal silicon junction. -Lead-free part meets environmental standards of MIL-STD-19500/228 Mechanical data -Case: Mini SMA/SOD-123H , molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Approx. weight: 0.011 grams SOD-123H 0.018(0.45) 0.006(0.15) 0.146(3.7) 0.130(3.3) 0.006(0.15) 0.002(0.05) 0.071(1.8) 0.055(1.4) 0.035(0.9) 0.028(0.7) 0.040(1.0) 0.024(0.6) 0.035(0.9) 0.028(0.7) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Symbol CDBMT220L-G CDBMT230L-G CDBMT240L-G Units Max. Repetitive Peak Reverse Voltage VRRM 20 30 40 V Continuous Reverse Voltage VR 20 30 40 V Max. RMS Voltage VRMS 14 21 28 V Max. Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 50 A Max. Forward Rectified Current (Fig.2) IO 2.0 A Max. Forward Voltage @IF=2.0A VF 0.38 0.40 0.4...




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