Darlington Transistors
BDW93, BDW94 Series
Features:
Designed for general-purpose amplifier and low speed switching app...
Darlington
Transistors
BDW93, BDW94 Series
Features:
Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage-VCEO (sus) = 80 V (Minimum) - BDW93B, BDW94B
100 V (Minimum) - BDW93C, BDW94C Collector-emitter saturation voltage-VCE (sat) = 2 V (Maximum) at IC = 5 A Monolithic construction with built-in-base-emitter shunt resistor
Dimension Minimum Maximum
Pin : 1. Base 2. Collector
3. Emitter
4. Collector (Case)
A B C D E F G H I J K L M O
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous Peak
Base Current Total Power Dissipation at TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.20 2.97
0.33 0.55
2.48 2.98
3.70 3.9
Dimensions : Millimetres
NPN BDW93B BDW93C
PNP BDW94B BDW94C
12 A Darlington Complementary Silicon Power
Transistors 45 to 100 V
80 W
TO-220
Symbol
VCEO VCBO VEBO
IC ICM IB
PD
TJ, TSTG
BDW93B BDW94B
BDW93C BDW94C
80 100
5
12 15
0.2 80 0.64
-65 to +150
Unit
V
A W W / °C °C
Characteristic Thermal Resistance Junction to Case
Symbol Rθjc
Maximum 1.56
Unit °C / W
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22/06/12 V1.1
Darlington
Transistors
BDW93, BDW94 Series
Figure1 Power Derating
PD, Power Dissipation (W)
TC, Temp...