SMD Type
Features
High fT: fT=400MHz.
PNP Silicon Epitaxia 2SA1608
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Par...
SMD Type
Features
High fT: fT=400MHz.
PNP Silicon Epitaxia 2SA1608
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PT Tj Tstg
Rating -60 -40 -5 -500 150 150
-55 to +150
Unit V V V mA
mW
1 Emitter 2 Base 3 Collector
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2%
hFE Classification
Marking hFE
Y12 75 150
Y13 100 200
Symbol
Testconditons
ICBO VCB = -40V, IE=0
IEBO VEB = -4V, IC=0
hFE VCE = -2V , IC = -150mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
fT VCE = -10V , IE = 20mA
Cob VCB = -10V , IE = 0 , f = 1.0MHz
ton VCC = -30V ,
tstg IC = 150mA ,
toff IB1 = -IB2 = 15mA
Y14 150 300
Min Typ Max Unit
-100 nA
-100 nA
75 140 300
-0.45 -0.75 V
-1 -1.3 V
150 400
MHz
5 8 pF
25 ns
70 ns
100 ns
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