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PZT3906 Dataheets PDF



Part Number PZT3906
Manufacturers SeCoS
Logo SeCoS
Description Epitaxial Planar Transistor
Datasheet PZT3906 DatasheetPZT3906 Datasheet (PDF)

Elektronische Bauelemente Description The PZT3906 is designed for general purpose switching and amplifier applications. RoHS Compliant Product PZT3906 PNP Transistor Epitaxial Planar Transistor SOT-223 3906 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS Tamb =25oC, unless otherwise specified Symbol Parameter .

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Elektronische Bauelemente Description The PZT3906 is designed for general purpose switching and amplifier applications. RoHS Compliant Product PZT3906 PNP Transistor Epitaxial Planar Transistor SOT-223 3906 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS Tamb =25oC, unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -40 -5 IC Collector Current -200 PD Total Power Dissipation 1.5 TJ,Tstg Junction and Storage Temperature -55~+150 Units V V V mA W CO ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO *BVCEO BVEBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min -40 -40 -5 - -0.65 60 80 100 60 30 250 - Typ. - -0.2 - -0.84 - - Max - -50 -50 -0.25 -0.4 -0.85 -0.95 300 - 4.5 Unit V V V nA nA V V V MHz pF Test Conditions IC=-10 µA IC=-1 mA IE=-10 µA VCB=-3 0V VEB=-3V IC=-10mA,IB=-1mA I C=- 50m A,IB=-5 mA I C=- 10m A,IB=-1 mA I C=- 50m A,IB=-5 mA VCE=-1 V, IC=-0.1mA VCE=-1 V, IC=-1mA VCE=- 1 V, IC=-10mA VCE=- 1 V, IC=-50mA VCE=-1 V, IC=-100mA VCE=- 20 V, IC=-10 mA, f=100MHz VCB=-5V, f=1MHz *Pulse test: Pulse width 300µs, Duty Cycle 2% http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 Elektronische Bauelemente Characteristics Curve PZT3906 PNP Transistor Epitaxial Planar Transistor http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2 .


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