PZT3906

RoHS PZT3906 PZT3906 TRANSISTOR (PNP) SOT-223 FEATURES DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.2 A Collector-base voltage V(BR)CBO: -40 V OOperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collector-base breakdown voltage NCollector-emitter breakdown voltage Emitter-base breakdown voltage OCollector cut-off current Emitter cut-off current TRDC current gain ECCollector-emitter saturation voltage ELBase-emitter saturation voltage Transition frequency JCollector output capacitance ENoise figure WDelay Time Symbol Test conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob NF td Ic=-10µA,IE=0 Ic=-1mA,IB=0 IE=-10µA,IC=0 VCB=-30V,IE=0 VCE=-30V,IB=0 VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA VCE=-20V,IC=-10mA,f=100MHz VCB=-0.5V,IE=0,f=100KHz VCE=-5V,Ic=-0.1mA, f=10HZ to15.7KHz,Rg=1KΩ VCC=-3.0Vdc,VBE=-0.5Vdc MIN TYP MAX UNIT -40 -40 -5 60 80 100 60 30 -0.65 250 -0.05 -0.5 V V V µA µA 300 -0.25 -0.4 -0.85 -0.95 4.5 V V V V MHz pF 4 dB 35 nS Rise Time tr IC=-10mAdc,IB1=-1.0mAdc 35 nS Storage Time Fall Time ts VCC=-3.0Vdc,IC=-10mAdc tf IB1=IB2=-1.0mAdc 225 nS 75 nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yong...