RoHS PZT3904
PZT3904 TRANSISTOR (NPN)
SOT-223
FEATURES
Power dissipation
DPCM: 1
Collector current
W (Tamb=25℃)
T...
RoHS PZT3904
PZT3904
TRANSISTOR (
NPN)
SOT-223
FEATURES
Power dissipation
DPCM: 1
Collector current
W (Tamb=25℃)
TICM: 0.2 A
Collector-base voltage
1. BASE 2. COLLECTOR 3. EMITTER
.,LV(BR)CBO: 60
V
Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃
OELECTRICAL CHARACTERISTICS (Tamb=25℃
unless
otherwise
specified)
Parameter
Symbol Test conditions
MIN TYP
CCollector-base breakdown voltage
Collector-emitter breakdown voltage
ICEmitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
ONDC current gain CTRCollector-emitter saturation voltage EBase-emitter saturation voltage LTransition frequency ECollector output capacitance
Noise figure
JDelay time ERise time WStorage time
V(BR)CBO Ic=10µA,IE=0
V(BR)CEO Ic=1mA,IB=0
V(BR)EBO IE=10µA,IC=0
ICBO
VCB=60V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=10V,IC=0.1mA
hFE(2) VCE=1V,IC=1mA
hFE(3) VCE=1V,IC=10mA
hFE(4) VCE=1V,IC=50mA
hFE(5) VCE=1V,IC=100mA
VCE(sat) IC=10mA,IB=1mA
VCE(sat) IC=50mA,IB=5mA
VBE(sat) IC=10mA,IB=1mA
VBE(sat) IC=50mA,IB=5mA
fT VCE=20V,IC=10mA,f=100MHz
Cob VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA, NF
f=10HZ to 15.7KHz,Rg=1KΩ
td VCC=3V, tr IC=10mA,VBE(off)=0.5V,IB1=1mA tS VCC=3V, IC=10mA
60 40 6
40 70 100 60 30
0.65
300
MAX
0.1 0.1
UNIT V V V µA µA
300
0.2 V 0.3 V 0.85 V 0.95 V
MHz 4 pF
5 dB
35 nS 35 nS 200 nS
Fall time
tf IB1= IB2= 1mA
50 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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