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PZT2907A

SeCoS

Silicon Planar Medium Power Transistor

Elektronische Bauelemente PZT2907A PNP Silicon Silicon Planar Medium Power Transistor RoHS Compliant Product A suffix ...


SeCoS

PZT2907A

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Description
Elektronische Bauelemente PZT2907A PNP Silicon Silicon Planar Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION  The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. SOT-223 MARKING Collector 2907A   = Date code Base BCE Emitter REF. A B C D E F I O MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) Parameter Symbol Value Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PD TJ, TSTG -60 -60 -5 -600 1.5 +150, -55 ~ +150 Millimeter Min. Max. 6.30 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.60 REF. 0.60 0.80 0.02 0.10 0° 10° REF. G H J K L M N Millimeter Min. Max. 0.02 0.10 1.50 2.00 0.25 0.35 0.85 1.05 2.30 REF. 2.90 3.10 13 TYP. Unit V V V mA W ℃ ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage Base - Emitter Voltage DC Current Gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat) VBE(sat) hFE1 hFE2 hFE3 hFE4 hFE5 Min. -60 -60 -5 75 100 100 100 50 Typ. - - -0.2 -0.5 180 - Max. - - -10 -50 -0.4 -1.6 -1.3 -2.6 300 - Transition Frequency fT 200 - - Collector Output ...




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