SMD Type
Transistors
PNP Transistors PZT2907A (KZT2907A)
■ Features
● Epitaxial planar die construction ● Complementa...
SMD Type
Transistors
PNP Transistors PZT2907A (KZT2907A)
■ Features
● Epitaxial planar die construction ● Complementary to PZT2222A
SOT-223
6.50±0.2 3.00±0.1
4
7.0±0.3 3.50±0.2
123
10
Unit:mm
1.80 (max) 0.02 ~ 0.1
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250 Gauge Plane
1.Base 2.Collector 3.Emitter 4.Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Rating -60 -60 -5 -600 1 150
-55 to 150
Unit
V
mA W ℃
www.kexin.com.cn 1
SMD Type
PNP Transistors PZT2907A (KZT2907A)
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time Rise time Storage time Fall time Emitter input capacitance Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA, IE= 0
VCEO VEBO
Ic= -10 mA, IB= 0 IE= -100μA, IC= 0
ICBO VCB= -50 V , IE= 0
IEBO VEB= -5V , IC=0
IC=-150 mA, IB=-15mA VCE(sat)
IC= -500 mA, IB= -50mA
IC=-150 mA, IB=-15mA VBE(sat)
IC= -500 mA, IB= -50mA
hFE(1) VCE= -10V, IC=- 0.1mA
hFE(2) VCE= -10V, IC= -1mA
hFE(3) VCE= -10V, IC=- 10mA
hFE(4) VCE= -10V, IC= -150mA
hFE(5)...