PZT2222A

PZT2222A NPN Silicon Planar Epitaxial Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BASE 1 COLLECTOR 2, 4 3 EM ITTER SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 4 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 40 75 6.0 600 1.5 150 -65 to +150 Unit Vdc Vdc Vdc Adc W C C Device Marking PZT2222A=GT2222A ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 µAdc, IC=0) Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc) Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc) Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0) Symbol Min Max Unit V(BR)CEO 40 - Vdc V(BR)CBO 75 - Vdc V(BR)EBO IBEX ICEX IEBO 6.0 - - Vdc 20 nAdc 10 nAdc 100 nAdc NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw PZT2222A ELECTRICALCHARACTERISTICS-Continued (T A = 25 C unless otherwise noted) C harac teris tic S ymbol OFF CHARACTERISTICS (continued) Collector-Base Cutof f Current (V CB = 60 Vdc, IE = 0) (V C B = 60 Vdc, IE = 0, TA = 125 C) I CBO ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I...