KTC4370

SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTC4370 KTC4370A Collector-Emitter Voltage KTC4370 KTC4370A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 180 160 180 5 1.5 0.15 20 150 -55 150 UNIT V V V A A W O Q A U E K LL M DD NN T T 123 G B J F P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3.00Ź0.30 G 12.30 MAX T RH 0.75 MAX J 13.60Ź0.50 K 3.90 MAX L 1.20 VM N 1.30 2.54 O 4.50Ź0.20 P 6.80 Q 2.60Ź0.20 HR S 10Ɓ 25Ş T 5Ş U 0.5 V 2.60Ź0.15 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current ICBO IEBO Collector-Emitter Breakdown Voltage KTC4370 KTC4370A V(BR)CEO DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency hFE (Note) VCE(sat) VBE fT Collector Output Capacitance Note : hFE Classification O:70~140, Cob Y:120~240 TEST CONDITION VCB=160V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=10V, IC=100mA VCB=10V, IE=0, f=1MHz MIN. - 160 180 70 - TYP. - 100 25 MAX. 1.0 1.0 ...