AON6788

AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON6788 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 80A < 4mΩ < 4.9mΩ 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 80 62 200 17 14 40 80 78 31 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 1.2 Max 30 64 1.6 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev2 : July 2011 www.aosmd.com Page 1 of 7 AON6788 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min...