N-Channel MOSFET
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3652 (FDB3652)
Features
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(...
Description
SMD Type
MOSFET
N-Channel PowerTrench MOSFET KDB3652 (FDB3652)
Features
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
+0.25.28 -0.2
+0.28.7 -0.2
TO-263
+0.2
4.57+0.1 -0.2 1.27-0.1
Unit: mm
+0.11.27 -0.1
+0.22.54 -0.2 15.25-+00..22 5.60
1.27+0.1 -0.1
0.1max
2.54+0.2 -0.2
5.08+0.1 -0.1
0.81+0.1 -0.1
2.54
0.4+0.2 -0.2
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current-Continuous TC=25
TA=25 Power dissipation
Derate above 25 Thermal Resistance Junction to Ambient Thermal Resistance, Junction-to-Case Channel temperature Storage temperature
Symbol VDSS VGSS
ID
PD
RèJA RèJC Tch Tstg
Rating 100 20 61 9 150 1.0 43 1.0 175
-55 to +175
Unit V V A A W
W/ /W /W
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SMD Type
KDB3652 (FDB3652)
Electrical Characteristics Ta = 25
Parameter Drain to source breakdown voltage
Symbol VDSS
Drain cut-off current
IDSS
Gate leakage current Gate threshold voltage
IGSS VGS(th)
Drain to source on-state resistance
RDS(on)
Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time Reverse Re...
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