BYW55

Silicon Mesa Rectifiers BYW52...BYW56 Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060 BYW54 – 1N5061 BYW55 – 1N5062 Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage, repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Max. pulse energy in the avalanche mode, non repetitive (inductive load switch off) i2* t–rating Junction temperature Storage temperature range tp=10ms ϕ=180° tp=20ms half sinus wave, Tj=175°C I(BR)R=1A, Tj=175°C Type BYW52 BYW53 BYW54 BYW55 BYW56 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV PR ER Value 200 400 600 800 1000 50 12 2 1000 20 Unit V V V V V A A A W mWs i2*t 8 A2*s Tj 175 °C Tstg –55...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (5) BYW52...BYW56 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=100°C IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=0.47MHz IF=0.5A...