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BYW52 Dataheets PDF



Part Number BYW52
Manufacturers TEMIC
Logo TEMIC
Description Silicon Mesa Rectifiers
Datasheet BYW52 DatasheetBYW52 Datasheet (PDF)

Silicon Mesa Rectifiers BYW52...BYW56 Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060 BYW54 – 1N5061 BYW55 – 1N5062 Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage, repetitive peak reverse voltage Peak forward surge current Repetitive peak fo.

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Silicon Mesa Rectifiers BYW52...BYW56 Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060 BYW54 – 1N5061 BYW55 – 1N5062 Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Reverse voltage, repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Max. pulse energy in the avalanche mode, non repetitive (inductive load switch off) i2* t–rating Junction temperature Storage temperature range tp=10ms ϕ=180° tp=20ms half sinus wave, Tj=175°C I(BR)R=1A, Tj=175°C Type BYW52 BYW53 BYW54 BYW55 BYW56 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV PR ER Value 200 400 600 800 1000 50 12 2 1000 20 Unit V V V V V A A A W mWs i2*t 8 A2*s Tj 175 °C Tstg –55...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (5) BYW52...BYW56 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=100°C IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms, VR=50V IF=1A, di/dt=5A/ms Type Symbol Min Typ Max Unit VF IR IR V(BR) 0.9 1.0 V 0.1 1 mA 5 10 mA 1600 V CD 50 pF trr 4 ms trr 4 ms Qrr 200 nC R thJA – Therm. Resist. Junction / Ambient ( K/W ) Typical Characteristics (Tj = 25_C unless otherwise specified) 50 3 120 ll 100 80 60 TL=constant 25 50 40 20 7 2 94 9086a xFigure 1. Epoxy glass hard tissue, board thickness 1.5 mm, RthJA 100 K/W 0 0 94 9101 5 10 15 20 25 l – Lead Length ( mm ) 30 Figure 2. Thermal Resistance vs. Lead Length 2 (5) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 BYW52...BYW56 1.2 I FAV– Average Forward Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 0 94 9163 RthJA=100K/W VR = VR RM 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 3. Average Forward Current vs. Ambient Temperature I FAV– Average Forward Current ( A ) 2.0 1.6 1.2 0.8 0.4 0 0 94 9172 vRthJA 45K/W VR = VR RM l=12mm 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 4. Average Forward Current vs. Ambient Temperature 1000 IF – Forward Current ( A ) 100 Tj = 25°C 10 Tj = 175°C 1 0.1 0.01 0 94 9175 0.6 1.2 1.8 2.4 VF – Forward Voltage ( V ) 3.0 Figure 6. Forward Current vs. Forward Voltage 80 f = 0.47 MHz Tj = 25°C 60 CD – Diode Capacitance ( pF ) 40 20 0 0.1 94 9177 1 10 VR – Reverse Voltage ( V ) 100 Figure 7. Diode Capacitance vs. Reverse Voltage IR – Reverse Current ( mA ) 100 Scattering Limit 10 1 0.1 0 94 9176 VR = VR RM 40 80 120 160 Tj – Junction Temperature ( °C ) 200 Figure 5. Reverse Current vs. Junction Temperature TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 3 (5) BYW52...BYW56 1000 Zthp – Thermal Resistance for Pulse Cond. (K/W) 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 1 10–5 10–4 94 9178 10–3 10–2 10–1 tp – Pulse Length ( s ) 100 101 Figure 8. Thermal Response VR RM= 1000 V, RthJA=100K/W Tamb= 25°C Tamb= 45°C Tamb= 60°C Tamb= 70°C Tamb= 100°C 100 101 102 IFRM – Repetitive Peak Forward Current ( A ) Dimensions in mm Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification ∅ 3.6 max. technical drawings according to DIN specifications 94 9538 ∅ 0.82 max. 26 min. 4.2 max. 26 min. 4 (5) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 BYW52...BYW56 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act A.


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