Document
Silicon Mesa Rectifiers
BYW52...BYW56
Features
D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes:
BYW52 – 1N5059 BYW53 – 1N5060 BYW54 – 1N5061 BYW55 – 1N5062
Applications
Rectifier, general purpose
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage, repetitive peak reverse voltage
Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power
Max. pulse energy in the avalanche mode, non repetitive (inductive load switch off) i2* t–rating Junction temperature Storage temperature range
tp=10ms
ϕ=180° tp=20ms half sinus wave, Tj=175°C I(BR)R=1A, Tj=175°C
Type BYW52 BYW53 BYW54 BYW55 BYW56
Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM
IFSM IFRM IFAV PR
ER
Value 200 400 600 800 1000 50 12 2 1000
20
Unit V V V V V A A A W
mWs
i2*t 8 A2*s Tj 175 °C Tstg –55...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter Junction ambient
Test Conditions l=10mm, TL=constant on PC board with spacing 25mm
Symbol RthJA RthJA
Value 45 100
Unit K/W K/W
TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94
1 (5)
BYW52...BYW56
Characteristics
Tj = 25_C Parameter
Forward voltage Reverse current
Breakdown voltage Diode capacitance Reverse recovery time
Reverse recovery charge
Test Conditions
IF=1A
VR=VRRM
VR=VRRM, Tj=100°C IR=100mA, tp/T=0.01, tp=0.3ms
VR=0, f=0.47MHz
IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms, VR=50V IF=1A, di/dt=5A/ms
Type Symbol Min Typ Max Unit
VF IR IR V(BR)
0.9 1.0
V
0.1 1 mA
5 10 mA
1600 V
CD 50 pF trr 4 ms
trr 4 ms
Qrr 200 nC
R thJA – Therm. Resist. Junction / Ambient ( K/W )
Typical Characteristics (Tj = 25_C unless otherwise specified)
50 3
120 ll
100
80
60 TL=constant 25 50
40
20
7 2 94 9086a
xFigure 1. Epoxy glass hard tissue, board thickness 1.5 mm, RthJA 100 K/W
0 0
94 9101
5 10 15 20 25 l – Lead Length ( mm )
30
Figure 2. Thermal Resistance vs. Lead Length
2 (5) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94
BYW52...BYW56
1.2
I FAV– Average Forward Current ( A )
1.0
0.8
0.6
0.4
0.2
0 0
94 9163
RthJA=100K/W VR = VR RM
40 80 120 160 200 Tamb – Ambient Temperature ( °C )
Figure 3. Average Forward Current vs. Ambient Temperature
I FAV– Average Forward Current ( A )
2.0
1.6
1.2
0.8
0.4
0 0
94 9172
vRthJA 45K/W
VR = VR RM l=12mm
40 80 120 160 200 Tamb – Ambient Temperature ( °C )
Figure 4. Average Forward Current vs. Ambient Temperature
1000
IF – Forward Current ( A )
100 Tj = 25°C
10 Tj = 175°C
1
0.1
0.01 0
94 9175
0.6 1.2 1.8 2.4 VF – Forward Voltage ( V )
3.0
Figure 6. Forward Current vs. Forward Voltage
80
f = 0.47 MHz Tj = 25°C
60
CD – Diode Capacitance ( pF )
40
20
0 0.1
94 9177
1 10 VR – Reverse Voltage ( V )
100
Figure 7. Diode Capacitance vs. Reverse Voltage
IR – Reverse Current ( mA )
100
Scattering Limit 10
1
0.1 0
94 9176
VR = VR RM
40 80 120 160 Tj – Junction Temperature ( °C )
200
Figure 5. Reverse Current vs. Junction Temperature
TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94
3 (5)
BYW52...BYW56
1000
Zthp – Thermal Resistance for Pulse Cond. (K/W)
100 tp/T=0.5
tp/T=0.2
10 tp/T=0.1 tp/T=0.05
tp/T=0.02
tp/T=0.01 1
10–5
10–4
94 9178
10–3
10–2
10–1
tp – Pulse Length ( s )
100
101
Figure 8. Thermal Response
VR RM= 1000 V, RthJA=100K/W
Tamb= 25°C Tamb= 45°C Tamb= 60°C Tamb= 70°C Tamb= 100°C 100 101 102 IFRM – Repetitive Peak Forward Current ( A )
Dimensions in mm
Sintered Glass Case SOD 57 Weight max. 0.5 g
Cathode Identification
∅ 3.6 max.
technical drawings according to DIN specifications
94 9538
∅ 0.82 max.
26 min.
4.2 max.
26 min.
4 (5) TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94
BYW52...BYW56
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act A.