Si4435

Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -30 +20 -8 -50 1.3 1.7 150 -55~+150 Unit V V A A W W 0C 0C Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(th) gFS RDS(ON) RDS(ON) Ciss Coss Crss Conditions ID=-250uA, VGS=0V VDS=-30V, VGS=0V VGS=+20V, VDS=0V VDS= VGS, ID=-250uA VDS=-5V, ID=-10A ID=-8A, VGS=-10V ID=-7A, VGS=-4.5V VDS=-15V, VGS=0V, f=1MHz VDS=-15V, VGS=0V, f=1MHz VDS=-15V, VGS=0V, f=1MHz Ratings min typ max -30 -10 +100 -1.0 -1.5 -3.0 24 15 20 20 35 Unit V uA nA V S mΩ mΩ pF pF pF 1 Si4435 Electrical Characteristics at Ta=250C (Continued) Parameter Symbol Conditions Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-...