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FPD6836P70

RFMD
Part Number FPD6836P70
Manufacturer RFMD
Description LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT
Published May 23, 2016
Detailed Description FPD6836P70 Low-Noise High-Frequency Packaged pHEMT FPD6836P70 LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 P...
Datasheet PDF File FPD6836P70 PDF File

FPD6836P70
FPD6836P70

Overview
FPD6836P70 Low-Noise High-Frequency Packaged pHEMT FPD6836P70 LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.
Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Features „ 22dBm Output Power (P1dB) „ 15dB Gain at 5.
8GHz „ 0.
8dB Noise Figure at 5.
8 GHz „ 32dB Output IP3 at 5.
8GHz „ 45% Power-Added Efficiency at 5.
8GHz „ Usable Gain to 18GHz Applications „ Gain blocks and med...


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