AP4511GH-HF

Advanced Power Electronics Corp. AP4511GH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1/D2 N-CH ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S1 G1 S2 G2 P-CH Description TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 35V 30mΩ 15A -35V 48mΩ -12A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 35 +20 15 9 50 10.4 0.083 -35 +20 -12 -7 -50 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 12 110 Units ℃/W ℃/W 1 201501166 AP4511GH-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown...