AP4511GH-A

Advanced Power Electronics Corp. AP4511GH-A RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance Description S1 G1 S2 G2 D1/D2 TO-252-4L N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 35V 27mΩ 8.6A -35V 45mΩ -6.7A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 G1 G2 S1 D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Rthj-a Thermal Resistance Junction-case Thermal Resistance Junction-ambient3 Rating N-channel P-channel 35 -35 ±20 ±20 8.6 -6.7 6.9 -5.4 50 -50 3.125 0.025 -55 to 150 -55 to 150 Max. Max. Value 8 40 Units V V A A A W W/℃ ℃ ℃ Units ℃/W ℃/W Data and specifications subject to change without notice 200627072-1/7 AP4511GH-A N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Tempera...