CRS15I30B

Schottky Barrier Diode CRS15I30B 1. Applications Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices 2. Features (1) Peak forward voltage: VFM = 0.4 V (max) @IFM = 1.5 A (2) Average forward current: IF(AV) = 1.5 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit CRS15I30B 1: Anode 2: Cathode 3-2A1S 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) (Note 1) 1.5 A Non-repetitive peak forward surge current IFSM (Note 2) 30 Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tℓ = 116 , square wave (α = 180°), VR = 15 V Note 2: f = 50 Hz, half-s...