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TDM2302 Dataheets PDF



Part Number TDM2302
Manufacturers Techcode
Logo Techcode
Description N-Channel Enhancement Mode MOSFET
Datasheet TDM2302 DatasheetTDM2302 Datasheet (PDF)

N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Features 20V/5A , R =20mΩ(typ.) @ V =4.5V DS(ON) GS RDS(ON) =40mΩ(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Pin Description Top View of SOT23-3L Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information N-Channel MOSFET TDM2302☐ ☐ -☐ ☐ ☐ Lead Free Code Handing Code Temp. Range Packge Code Pa.

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N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Features 20V/5A , R =20mΩ(typ.) @ V =4.5V DS(ON) GS RDS(ON) =40mΩ(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Pin Description Top View of SOT23-3L Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G Ordering and Marking Information N-Channel MOSFET TDM2302☐ ☐ -☐ ☐ ☐ Lead Free Code Handing Code Temp. Range Packge Code Packge Code A: SOT23-3L Operating Junction Temp. Rang C: -55 to 150°C Handing Code TU:Tube TR:Tape & Reel Lead Free Code: L:Lead Free Device Blank:Original Device TDM2302 M24 X X:Date Code Note: TECHCODE lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. TECHCODE lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. TECHCODE reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. August, 20, 2008. 1 Techcode Semiconductor Limited N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Absolute Maximum Ratings (T = 25°C unless otherwise noted) A Symbol Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 ID* Continuous Drain Current 5 IDM* 300µs Pulsed Drain Current VGS=4.5V 10 IS* Diode Continuous Forward Current 1 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 PD* Maximum Power Dissipation TA=25°C TA=100°C 0.83 0.3 RθJA* Thermal Resistance-Junction to Ambient 150 Note: * 2 Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics (T = 25°C unless otherwise noted) A TDM2302 Symbol Parameter Test Condition Min. Typ. Unit V A A °C W °C/W Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA VDS=16V, VGS=0V 20 V 1 µA VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance VSD a Diode Forward Voltage Gate Charge Characteristics b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS, IDS=250µA VGS=±10V, VDS=0V VGS=4.5V, IDS=3A V GS=2.5V, I DS=2A ISD=0.55A, VGS=0V 0.5 VDS=10V, VGS=4.5V, IDS=3A 0.7 1 V ±100 nA 20 40 mΩ 40 75 -0.5 -1.3 V 5 6.5 0.7 nC 0.7 August, 20, 2008. 2 Techcode Semiconductor Limited N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Electrical Characteristics (Cont.)(T = 25°C unless otherwise noted) A Symbol Parameter Test Condition TDM2302 Unit Min. Typ. Max. Dynamic Characteristicsb RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω 5Ω 255 70 PF 50 6 15 5 11 ns 12 24 6 15 Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%. b : Guaranteed by design, not subject to production testing. August, 20, 2008. 3 Techcode Semiconductor Limited N-Channel Enhancement Mode MOSFET Typical Characteristics Power Dissipation Drain Current Datasheet TDM2302 Tj - Junction Temperature (°C) Safe Operation Area Tj - Junction Temperature (°C) Thermal Transient Impedance VDS - Drain - Source Voltage (V) August, 20, 2008. Square Wave Pulse Duration (sec) 4 Techcode Semiconductor Limited N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance VDS - Drain - Source Voltage (V) Transfer Characteristics ID - Drain Current (A) Gate Threshold Voltage VGS - Gate - Source Voltage (V) August, 20, 2008. Tj - Junction Temperature (°C) 5 Techcode Semiconductor Limited N-Channel Enhancement Mode MOSFET Datasheet TDM2302 Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Tj - Junction Temperature (°C) Capacitance VSD - Source - Drain Voltage(V) Gate Charge VDS - Drain - Source Voltage (V) August, 20, 2008. QG - Gate Charge (nC) 6 Techcode Semiconductor Limited N-Channel Enhancement Mode MOSFET Packaging Information SOT23-3L Datasheet TDM2302 Millimeters Inches Dim Min. Max. Min. A 1.00 1.30 0.039 A1 0.00 0.10 0.000 B 0.35 0.51 0.014 C 0.10 0.25 0.004 D 2.70 3.10 0.106 E 1.40 1.80 0.055 e 1.90/2.1 BSC. 0.075/0.083 BSC. H 2.40 3.00 0.094 L 0.37 0.015 Max. 0.051 0.004 0.020 0.010 0.122 0.071 0.118 August, 20, 2008. 7 Techcode Semiconductor Limited .


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