Document
N-Channel Enhancement Mode MOSFET
Datasheet TDM2302
Features
20V/5A ,
R =20mΩ(typ.) @ V =4.5V
DS(ON)
GS
RDS(ON) =40mΩ(typ.) @ VGS =2.5V Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Pin Description
Top View of SOT23-3L
Applications
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G
Ordering and Marking Information
N-Channel MOSFET
TDM2302☐ ☐ -☐ ☐ ☐ Lead Free Code Handing Code Temp. Range Packge Code
Packge Code A: SOT23-3L
Operating Junction Temp. Rang C: -55 to 150°C
Handing Code TU:Tube TR:Tape & Reel
Lead Free Code: L:Lead Free Device Blank:Original Device
TDM2302 M24 X
X:Date Code
Note: TECHCODE lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. TECHCODE lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
TECHCODE reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
August, 20, 2008.
1 Techcode Semiconductor Limited
N-Channel Enhancement Mode MOSFET
Datasheet TDM2302
Absolute Maximum Ratings (T = 25°C unless otherwise noted) A
Symbol Parameter
Rating
VDSS Drain-Source Voltage
20
VGSS Gate-Source Voltage
±10
ID* Continuous Drain Current
5
IDM* 300µs Pulsed Drain Current
VGS=4.5V
10
IS* Diode Continuous Forward Current
1
TJ Maximum Junction Temperature
150
TSTG Storage Temperature Range
-55 to 150
PD* Maximum Power Dissipation
TA=25°C TA=100°C
0.83 0.3
RθJA* Thermal Resistance-Junction to Ambient
150
Note: *
2
Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics (T = 25°C unless otherwise noted) A
TDM2302
Symbol
Parameter
Test Condition
Min.
Typ.
Unit V A A °C W
°C/W
Max. Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA VDS=16V, VGS=0V
20
V 1 µA
VGS(th) IGSS
Gate Threshold Voltage Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSD a
Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS, IDS=250µA VGS=±10V, VDS=0V VGS=4.5V, IDS=3A V GS=2.5V, I DS=2A
ISD=0.55A, VGS=0V
0.5
VDS=10V, VGS=4.5V, IDS=3A
0.7 1 V
±100
nA
20 40 mΩ
40 75
-0.5 -1.3
V
5 6.5 0.7 nC 0.7
August, 20, 2008.
2 Techcode Semiconductor Limited
N-Channel Enhancement Mode MOSFET
Datasheet TDM2302
Electrical Characteristics (Cont.)(T = 25°C unless otherwise noted) A
Symbol Parameter
Test Condition
TDM2302 Unit
Min. Typ. Max.
Dynamic Characteristicsb
RG Ciss Coss Crss td(ON) Tr td(OFF) Tf
Gate Resistance
Input Capacitance
Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V, VDS=15V, Frequency=1.0MHz
VDD=-10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω
5Ω 255
70 PF
50
6 15 5 11
ns 12 24 6 15
Notes: a : Pulse test ; pulse width≤ 300µs, duty cycle≤ 2%.
b : Guaranteed by design, not subject to production testing.
August, 20, 2008.
3 Techcode Semiconductor Limited
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Power Dissipation
Drain Current
Datasheet TDM2302
Tj - Junction Temperature (°C)
Safe Operation Area
Tj - Junction Temperature (°C)
Thermal Transient Impedance
VDS - Drain - Source Voltage (V) August, 20, 2008.
Square Wave Pulse Duration (sec)
4 Techcode Semiconductor Limited
N-Channel Enhancement Mode MOSFET
Datasheet TDM2302
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
VDS - Drain - Source Voltage (V) Transfer Characteristics
ID - Drain Current (A) Gate Threshold Voltage
VGS - Gate - Source Voltage (V)
August, 20, 2008.
Tj - Junction Temperature (°C)
5 Techcode Semiconductor Limited
N-Channel Enhancement Mode MOSFET
Datasheet TDM2302
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source - Drain Voltage(V) Gate Charge
VDS - Drain - Source Voltage (V) August, 20, 2008.
QG - Gate Charge (nC)
6 Techcode Semiconductor Limited
N-Channel Enhancement Mode MOSFET
Packaging Information
SOT23-3L
Datasheet TDM2302
Millimeters
Inches
Dim
Min.
Max.
Min.
A 1.00
1.30
0.039
A1 0.00
0.10
0.000
B 0.35
0.51
0.014
C 0.10
0.25
0.004
D 2.70
3.10
0.106
E 1.40
1.80
0.055
e 1.90/2.1 BSC.
0.075/0.083 BSC.
H 2.40
3.00
0.094
L 0.37
0.015
Max. 0.051 0.004 0.020 0.010 0.122 0.071
0.118
August, 20, 2008.
7 Techcode Semiconductor Limited
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