AP6985GN2-HF

Advanced Power Electronics Corp. AP6985GN2-HF Halogen-Free Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.8V Gate Drive ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G Description AP6985 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D BVDSS RDS(ON) ID -20V 26mΩ -8A S D D G Top view D D S D D D S S DFN 2x2 D D G Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3 @ VGS=4.5V Drain Current3 @ VGS=4.5V Pulsed Drain Current1 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range -20 +8 -8 -6.4 -30 2.4 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 52 Unit ℃/W 1 201408202 AP6985GN2-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transcon...