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AP6950GYT-HF

Advanced Power Electronics

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP6950GYT-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simp...


Advanced Power Electronics

AP6950GYT-HF

File Download Download AP6950GYT-HF Datasheet


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Advanced Power Electronics Corp. AP6950GYT-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1 CH-1 BVDSS 30V ▼ Easy for Synchronous Buck Converter Application ▼ RoHS Compliant & Halogen-Free G1 Description G2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. RDS(ON) D2/S1 ID CH-2 BVDSS RDS(ON) IS2 D G2 S2 S2 S2 S1/D2 18mΩ 21A 30V 10.5mΩ 39A G2 S2 S2 S2 The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. D1 G1 D1 D1 D1 G1 D1 D1 D1 PMPAK® 3 x 3 Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units CH-1 CH-2 VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip Limited) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range 30 30 +20 +12 21 39 8.3 11.8 6.6 9.5 40 40 1.9 2.2 -55 to 150 -55 to 150 V V A A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Maximum Thermal Resistance, Junction-ambient4 Data & specifications subject to change without notice Rating CH-1 CH-2 10 5 65 55 180 145 Units ℃/W ℃/W ℃/W 1 201501296 AP6...




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