DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP6950GYT-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simp...
Description
Advanced Power Electronics Corp.
AP6950GYT-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1 CH-1 BVDSS
30V
▼ Easy for Synchronous Buck
Converter Application ▼ RoHS Compliant & Halogen-Free
G1
Description
G2
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
RDS(ON)
D2/S1
ID
CH-2 BVDSS
RDS(ON)
IS2 D
G2 S2 S2 S2
S1/D2
18mΩ
21A 30V 10.5mΩ 39A
G2 S2 S2 S2
The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters.
D1
G1 D1 D1 D1
G1 D1 D1 D1
PMPAK® 3 x 3
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
CH-1
CH-2
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip Limited) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30 30 +20 +12 21 39 8.3 11.8 6.6 9.5 40 40 1.9 2.2
-55 to 150 -55 to 150
V V A A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Rating
CH-1
CH-2
10 5
65 55
180 145
Units
℃/W ℃/W ℃/W
1 201501296
AP6...
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