Power MOSFET
NTR4501N, NSTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Ga...
Description
NTR4501N, NSTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NSTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Load/Power Switch for Portables Load/Power Switch for Computing DC−DC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State Power Dissipation (Note 1)
Steady State
TA = 25°C TA = 85°C
Steady State
VDSS VGS ID
PD
20 ±12 3.2 2.4 1.25
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM 10.0 TJ, −55 to Tstg 150 IS 1.6 TL 260
Unit V V A A W
A °C
A °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient (Note 1)
RqJA
100 °C/W
Junction−to−Ambient (Note 2)
RqJA
300
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surf...
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