NSTR4501N

NTR4501N, NSTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NSTR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Load/Power Switch for Portables Load/Power Switch for Computing DC−DC Conversion MAXIMUM RATINGS (TJ= 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C Steady State VDSS VGS ID PD 20 ±12 3.2 2.4 1.25 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM 10.0 TJ, −55 to Tstg 150 IS 1.6 TL 260 Unit V V A A W A °C A °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient (Note 1) RqJA 100 °C/W Junction−to−Ambient (Note 2) RqJA 300 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surf...