Document
Main Product Characteristics:
VDSS RDS(on)
700V 1.1Ω (typ.)
ID 6A ①
Features and Benefits:
TO-251S
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF6NS70UGS
Marking and pin Assignment
Schematic diagram
Description:
The SSF6NS70UGS series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range
Max. 6① 3.7① 18 28 0.224 700 ± 30 72 1.2 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.07.17 www.silikron.com
Version : 1.0
page 1 of 8
SSF6NS70UGS
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 4.4 62
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
700 — — — —
2 — — — — — — — — — — — — — — —
Typ. — 1.1 2.3 1.25 2.6 — 2.1 — — — — 9.7 1.9 2.3 8.7 5.5 22 13 344 17 2.7
Max. — 1.25 — 1.4 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω Ω V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =700V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 5A, VDS=200V, VGS = 10V
VGS=10V, VDS =400V, ns
RGEN=10.2Ω,ID =1.5A
VGS = 0V pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 6①
— — 18
— 0.79 1.2 — 92 — — 410 —
Units A
A V nS nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = 1.5A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.07.17 www.silikron.com
Version:1.0
page 2 of 8
Test circuits and Waveforms
EAS Test Circuit:
SSF6NS70UGS
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous cu.