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SSF6NS70UGS Dataheets PDF



Part Number SSF6NS70UGS
Manufacturers SILIKRON
Logo SILIKRON
Description N-Channel MOSFET
Datasheet SSF6NS70UGS DatasheetSSF6NS70UGS Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 700V 1.1Ω (typ.) ID 6A ① Features and Benefits: TO-251S  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF6NS70UGS Marking and pin Assignment Schematic diagram Description: The SSF6NS70UGS series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high r.

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Main Product Characteristics: VDSS RDS(on) 700V 1.1Ω (typ.) ID 6A ① Features and Benefits: TO-251S  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF6NS70UGS Marking and pin Assignment Schematic diagram Description: The SSF6NS70UGS series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range Max. 6① 3.7① 18 28 0.224 700 ± 30 72 1.2 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.07.17 www.silikron.com Version : 1.0 page 1 of 8 SSF6NS70UGS Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 4.4 62 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 700 — — — — 2 — — — — — — — — — — — — — — — Typ. — 1.1 2.3 1.25 2.6 — 2.1 — — — — 9.7 1.9 2.3 8.7 5.5 22 13 344 17 2.7 Max. — 1.25 — 1.4 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω Ω V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =700V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 5A, VDS=200V, VGS = 10V VGS=10V, VDS =400V, ns RGEN=10.2Ω,ID =1.5A VGS = 0V pF VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 6① — — 18 — 0.79 1.2 — 92 — — 410 — Units A A V nS nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = 1.5A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.07.17 www.silikron.com Version:1.0 page 2 of 8 Test circuits and Waveforms EAS Test Circuit: SSF6NS70UGS Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuous cu.


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