Document
Main Product Characteristics:
VDSS RDS(on)
700V 0.95Ω (typ.)
ID 6A ①
Features and Benefits:
TO-251 (IPAK)
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF6NS70UG
Marking and pin Assignment
Schematic diagram
Description:
The SSF6NS70UG series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range
Max. 6① 3.7① 18 33 0.264 700 ± 30 72 1.2 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.02.25 www.silikron.com
Version : 1.0
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SSF6NS70UG
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 3.8 62
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
700 — — — —
2 — — — — — — — — — — — — — — —
Typ. — 0.95 2.0 1.15 2.1 — 2.1 — — — —
10.5 2.8 4.5 8.7 5.8 24 14 338 17 2.7
Max. — 1.15 — 1.3 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω Ω V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =700V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 5A, VDS=200V, VGS = 10V
VGS=10V, VDS =400V, ns
RGEN=10.2Ω,ID =1.5A
VGS = 0V pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 6①
— — 18
— 0.79 1.2 — 102 — — 421 —
Units A
A V nS nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = 1.5A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.02.25 www.silikron.com
Version : 1.0
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Test circuits and Waveforms
SSF6NS70UG
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.02.25 www.silikron.com
Version : 1.0
page 3 of 8
Typical electrical and thermal characteristics
SSF6NS70UG
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2013.02.25 www.silikron.com
Version : 1.0
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Typical electrical and thermal characteristics
SSF6NS70UG
Figure 5. Maximum Drain Current Vs. Case Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.02.25 www.silikron.com
Version : 1.0
page 5 of 8
Mechanical Data:
TO-251 PACKAGE OUTLINE DIMENSION
SSF6NS70UG
Symbol
A A1 B b c c1 D D1 E e e1 L
Dimension In Millimeters
Min Nom Max 2.200 - 2.400 0.950 - 1.150 0.950 - 1.250 0.500 - 0.700 0.450 - 0.550 0.450 - 0.550 6.450 - 6.750 5.200 - 5.400 5.950 - 6.250 2.240 - 2.340 4.430 - 4.730 9.000 - 9.400
Dimension In Inches
Min Nom Max 0.087 - 0.094 0.037 - 0.045 0.037 - 0.049 0.020 - 0.028 0.018 - 0.022 0.018 - 0.022 0.254 - 0.266 0.205 - 0.213 0.234 - 0.246 0.088 - 0.092 0.174 - 0.186 0.354 - 0.370
©Silikron Semiconductor CO.,LTD.
2013.02.25 www.silikron.com
Version : 1.0
page 6 of 8
Ordering and Marking Information
Device Marking: SSF6NS70UG
Package (Available) TO-251(IPAK)
Operating Temperature Range C : -55 to 150 ºC
SSF6NS70UG
Devices per Unit
Package Units/
Type
Tube
TO-251
75
Tubes/Inner Box
60
Units/Inner Box
4500
Inner Boxes/Carton Box
5
Units/Carton Box
225000
Reliability Te.