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SSF6NS70UG Dataheets PDF



Part Number SSF6NS70UG
Manufacturers SILIKRON
Logo SILIKRON
Description N-Channel MOSFET
Datasheet SSF6NS70UG DatasheetSSF6NS70UG Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 700V 0.95Ω (typ.) ID 6A ① Features and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF6NS70UG Marking and pin Assignment Schematic diagram Description: The SSF6NS70UG series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, h.

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Main Product Characteristics: VDSS RDS(on) 700V 0.95Ω (typ.) ID 6A ① Features and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF6NS70UG Marking and pin Assignment Schematic diagram Description: The SSF6NS70UG series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating Junction and Storage Temperature Range Max. 6① 3.7① 18 33 0.264 700 ± 30 72 1.2 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.02.25 www.silikron.com Version : 1.0 page 1 of 8 SSF6NS70UG Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 3.8 62 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 700 — — — — 2 — — — — — — — — — — — — — — — Typ. — 0.95 2.0 1.15 2.1 — 2.1 — — — — 10.5 2.8 4.5 8.7 5.8 24 14 338 17 2.7 Max. — 1.15 — 1.3 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω Ω V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VGS=10V,ID = 2.8A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =700V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 5A, VDS=200V, VGS = 10V VGS=10V, VDS =400V, ns RGEN=10.2Ω,ID =1.5A VGS = 0V pF VDS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 6① — — 18 — 0.79 1.2 — 102 — — 421 — Units A A V nS nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = 1.5A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.02.25 www.silikron.com Version : 1.0 page 2 of 8 Test circuits and Waveforms SSF6NS70UG Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.02.25 www.silikron.com Version : 1.0 page 3 of 8 Typical electrical and thermal characteristics SSF6NS70UG Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2013.02.25 www.silikron.com Version : 1.0 page 4 of 8 Typical electrical and thermal characteristics SSF6NS70UG Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2013.02.25 www.silikron.com Version : 1.0 page 5 of 8 Mechanical Data: TO-251 PACKAGE OUTLINE DIMENSION SSF6NS70UG Symbol A A1 B b c c1 D D1 E e e1 L Dimension In Millimeters Min Nom Max 2.200 - 2.400 0.950 - 1.150 0.950 - 1.250 0.500 - 0.700 0.450 - 0.550 0.450 - 0.550 6.450 - 6.750 5.200 - 5.400 5.950 - 6.250 2.240 - 2.340 4.430 - 4.730 9.000 - 9.400 Dimension In Inches Min Nom Max 0.087 - 0.094 0.037 - 0.045 0.037 - 0.049 0.020 - 0.028 0.018 - 0.022 0.018 - 0.022 0.254 - 0.266 0.205 - 0.213 0.234 - 0.246 0.088 - 0.092 0.174 - 0.186 0.354 - 0.370 ©Silikron Semiconductor CO.,LTD. 2013.02.25 www.silikron.com Version : 1.0 page 6 of 8 Ordering and Marking Information Device Marking: SSF6NS70UG Package (Available) TO-251(IPAK) Operating Temperature Range C : -55 to 150 ºC SSF6NS70UG Devices per Unit Package Units/ Type Tube TO-251 75 Tubes/Inner Box 60 Units/Inner Box 4500 Inner Boxes/Carton Box 5 Units/Carton Box 225000 Reliability Te.


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