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TCR2DG295 Dataheets PDF



Part Number TCR2DG295
Manufacturers Toshiba
Logo Toshiba
Description Low Noise 200 mA CMOS Low Drop-Out Regulator
Datasheet TCR2DG295 DatasheetTCR2DG295 Datasheet (PDF)

TCR2DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2DG series Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V and capable of driving up to 200 mA. They feature over.

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TCR2DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2DG series Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and thermal shut down function. The TCR2DG series is offered in the ultra small package WCSP4 ( 0.79 mm x 0.79 mm x 0.5 mm). It has a low dropout voltage of 75 mV ( 2.5 V output, IOUT = 100 mA) with low output noise voltage of 18 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±65 mV ( IOUT = 1 mA⇔150 mA, COUT =1.0 μF). As small ceramic input and output capacitors can be used with the Weight : 0.7 mg (typ.) WCSP4 TCR2DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features • Low Drop-out Voltage ( VIN-VOUT = 75 mV (typ.) at 2.5 V-output, IOUT = 100 mA ) • Low quiescent bias current ( IB = 45 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode ) • Low output noise voltage VNO = 22 μVrms (typ.) at 3.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 18 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 14 μVrms (typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz • High ripple rejection ratio R.R = 75 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =1kHz R.R = 62 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =10kHz R.R = 50 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =100kHz • Fast load transient response (⊿VOUT = ±65 mV (typ.) at IOUT = 1mA ⇔ 150 mA, COUT =1.0 μF ) • Output voltage accuracy ±1.0 % • Over current protection • Thermal shut down function • Built-in inrush current reduction circuit • Pull down connection between CONTROL and GND • Ceramic capacitors can be used ( CIN = 0.47μF, COUT =1.0 μF ) • Ultra small package, WCSP4 ( 0.79 mm x 0.79 mm x 0.50 mm ) Pin Assignment (top view) CONTROL (A2) VIN (B2) GND (A1) VOUT (B1) 1 Start of commercial production 2013-01 2014-03-01 Absolute Maximum Ratings (Ta = 25°C) TCR2DG series Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Output current Power dissipation Operation temperature range Junction temperature Storage temperature range VIN VCT VOUT IOUT PD Topr Tj Tstg 6.0 -0.3 to 6.0 -0.3 to VIN + 0.3 200 800 (Note1) −40 to 85 150 −55 to150 V V V mA mW °C °C °C Note: Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.8mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 2 2014-03-01 List of Products Number, Marking and Output voltage TCR2DG series Top Marking Products No. TCR2DG12 TCR2DG125 TCR2DG13 TCR2DG14 TCR2DG15 TCR2DG16 TCR2DG17 TCR2DG18 TCR2DG19 TCR2DG20 TCR2DG21 TCR2DG22 TCR2DG23 TCR2DG24 TCR2DG25 TCR2DG26 TCR2DG27 TCR2DG28 TCR2DG285 TCR2DG29 TCR2DG295 TCR2DG30 TCR2DG31 TCR2DG32 TCR2DG33 TCR2DG34 TCR2DG35 TCR2DG36 Marking D3 D8 D4 D5 DA DB DD DE DF DG DH DI DK DL DM DN DO DP D7 DR D6 DS DT DV DW DX DY DZ Output voltage (V) 1.2 1.25* 1.3* 1.4* 1.5 1.6* 1.7* 1.8 1.9* 2.0* 2.1* 2.2* 2.3* 2.4* 2.5 2.6* 2.7* 2.8 2.85* 2.9* 2.95* 3.0 3.1* 3.2* 3.3 3.4* 3.5* 3.6 Example: TCR2DG15 (1.5 V output) DA Index * Please contact your local Toshiba representative if you are interested in products with * sign 3 2014-03-01 Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.47 μF, COUT = 1.0 μF, Tj = 25°C) TCR2DG series Characteristics Output voltage accuracy Input voltage Line regulation Load regulation Quiescent current Stand-by current Drop-out voltage Temperature coefficient Output noise voltage Ripple rejection ratio Load transient response Control voltage (ON) Control voltage (OFF) Symbol Test Condition Min Typ. Max Unit VOUT ⎯ -1.0 ⎯ +1.0 % VIN ⎯ 2.0 ⎯ 5.5 V Reg・line 2.0 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ⎯ 0.1 5 mV Reg・load 1 mA ≤ IOUT ≤ 150 mA ⎯ 5 10 mV IB IOUT = 0 mA ⎯ 45 70 μA IB (OFF) VCT = 0 V ⎯ 0.1 0.7 μA VIN-VOUT IOUT = 100 mA (Note 2) .


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