FJP2160D

FJP2160D — ESBCTTMM Rated NPN Silicon Transistor FJP2160D ESBCTM Rated NPN Silicon Transistor May 2012 Applications High Voltage and High Speed Power Switch Application Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM) Smart Meter, Smart Breakers, HV Industrial Power Supplies Motor Driver and Ignition Driver ESBC Features (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv RCS(ON) 0.261 Ω ∗ Low Equivalent On Resistance Very Fast Switch : 150KHz Squared RBSOA : Up to 1600Volts Avalanche Rated Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200volts) Low Switching Losses Reliable HV switch : No False Triggering due to High dv/dt Transients. Description The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses. The ESBCTM switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBCTM MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBCTM configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2160D provides exceptional reliability and a large operatin...