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FGH40T100SMD

Fairchild Semiconductor

IGBT

FGH40T100SMD 1000V, 40A Field Stop IGBT February 2012 FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features • High ...


Fairchild Semiconductor

FGH40T100SMD

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Description
FGH40T100SMD 1000V, 40A Field Stop IGBT February 2012 FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features High current capability Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A High input impedance Fast switching RoHS compliant Applications UPS, welder, solar application PFC application General Description Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder, solar applications. E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Pulsed Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 125oC @ TC = 25oC @ TC = 25oC @ TC = 125oC @ TC = 25oC @ TC = 25oC @ TC = 125oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter RqJC(IGBT) RqJC(Diode) RqJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient C G E Ratings 1000 ± 20 80 40 120 80 40 120 333 111 -55 to +175 -55 to +175 300 Typ. - Max. 0.45 0.8...




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