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FGA30S120P

Fairchild Semiconductor

IGBT

FGA30S120P Shorted AnodeTM IGBT FGA30S120P Shorted AnodeTM IGBT Features • High speed switching • Low saturation voltag...


Fairchild Semiconductor

FGA30S120P

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Description
FGA30S120P Shorted AnodeTM IGBT FGA30S120P Shorted AnodeTM IGBT Features High speed switching Low saturation voltage: VCE(sat) =1.75V @ IC = 30A High input impedance RoHS compliant Applications Induction Heating and Microwave Oven Soft Switching Applications October 2012 General Description Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is designed for induction heating and microwave oven. C GCE TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES IC ICM (1) Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC IF Diode Continuous Forward Current @ TC = 25oC IF Diode Continuous Forward Current @ TC = 100oC PD Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Limited by Tjmax G E Ratings 1300 ±25 60 30 150 60 30 348 174 -55 to +175 -55 to +175 300 Typ. --- Max. 0.43 40 Units V V A A A A A W W oC oC oC Units oC/W oC/W ...




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