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CM50TF-12H

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N u ...


Mitsubishi Electric Semiconductor

CM50TF-12H

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Description
MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N u v w E N D BuN EuN BvN EvN BwN EwN S - DIA. (2 TYP.) M R F R L F R L K Q TAB #110, t = 0.5 TAB #250, t = 0.8 G P H R P (BuP) GuP EuP u (BvP) GvP EvP v (BwP) GwP EwP w Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-12H is a 600V (VCES), 50 Ampere SixIGBT Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 12 (BuN) GuN EuN N (BvN) GvN EvN (BwN) GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 5.00 4.33±0.01 3.86 2.20 1.57 1.12 1.04 1.01 0.98 Millimeters 127.0 110.0±0.2 98.0 56.0 40.0 28.5 26.5 25.6 25.0 Dimensions K L M N P Q R S Inches 0.85 0.83 0.75 0.71 0.69 0.65 0.30 0.22 Dia. Millimeters 21.5 21.0 19.0 18.0 17.5 ...




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