N-Channel MOSFET
Elektronische Bauelemente
SGM2310B
2.7A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET
RoHS Compliant Produ...
Description
Elektronische Bauelemente
SGM2310B
2.7A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SGM2310B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The
SGM2310B is universally used for all commercial-industrial applications.
FEATURES
Simple Drive Requirement Small Package Outline
MARKING
K F
2310B
= Date code
SOT-89
A
Top View C B
4
L E
123
D GH
REF.
A B C D E F
Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60
3.00 REF. 0.40 0.52
1.Gate 2.Drain 3.Source
J
REF.
G H J K L
Millimeter Min. Max.
-0.89 1.20 0.35 0.41 0.70 0.80
1.50 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-89
3K
Leader Size 7 inch
TOP VIEW
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1 , VGS@10V
Pulsed Drain Current 2 Power Dissipation 3
TA=25°C TA=70°C
TA=25°C
ID
IDM PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Maximum Junction to Ambient 1
Thermal Resistance Rating
RθJA
Ratings
60 ±20 2.7 2.2 10 1.25 0.01 -55~150
100
Unit
V V
A
A W °C / W °C
°C / W
http://www.SeCoSGmbH.com/
04-Nov-2014 Rev. B
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SGM2310B
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