SGM2308

Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2308 is universally used for all commercialindustrial surface mount applications. Features * Simple Drive Requirement * Small Package Outline D G S SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @4.5V Continuous Drain Current,3 VGS @4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25oC ID@TA=70 oC IDM PD@TA=25oC Tj, Tstg Ratings 60 ±20 3.0 2.3 10 1.5 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 83.3 Unit oC/W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SGM2308 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltag...