Document
Elektronische Bauelemente
SGM2301
-2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SGM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SGM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
* Surface Mount Device * Simple Drive Requirement
D
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
SOT-89
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
G H I J K L M
Millimeter
Min. Max. 3.00 REF. 1.50 REF.
0.40 0.52 1.40 1.60 0.35 0.41
5° TYP. 0.70 REF.
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=25 oC
Tj, Tstg
Ratings -20 ±12 -2.6 -2.1 -10 1.38 0.01
-55~+150
Unit V V A A A W
W / oC oC
Thermal Data
Parameter Thermal Resistance Junction-ambient3
Max.
Symbol Rthj-a
Ratings 90
Unit
oC /W
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01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
Elektronische Bauelemente
SGM2301
-2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC)
IGSS IDSS
Static Drain-Source On-Resistance2
RDS(ON)
Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
Min. -20
_
-0.5
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _
_
Typ.
_
-0.1
_ _ _ _ _ _
5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 4.4
Max.
_ _
_
±100 -1 -10 130 190 10 _ _ _ _ _ _ _ _ _
_
Unit Test Condition
V V/ oC
VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA
V VDS=VGS, ID=-250uA
nA VGS=±12V
uA VDS=-20V,VGS=0
uA VDS=-16V,VGS=0
VGS=-5.0V, ID=-2.8A m
VGS=-2.8V, ID=-2A
ID=-2.8A nC VDS=-6.0V
VGS=-5.0V
VDS=-15V ID=-1A
nS VGS=-10V RG=6
RD=15
VGS=0V pF VDS=-6V
f=1.0MHz
S VDS=-5V, ID=-2.8A
Source-Drain Diode
Parameter Forward On Voltage2
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1
Symbol VSD
Is ISM
Min.
_ _
_
Typ.
_ _
_
Max.
-1.2 -1 -10
Unit
V
Test Condition IS=-1.6A, VGS=0V.
A VD=VG=0V, VS=-1.2V G
A
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
Elektronische Bauelemente Characteristics Curve
SGM2301
-2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of
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Reverse Diode
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
Elektronische Bauelemente
SGM2301
-2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
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01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4
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