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SGM2301 Dataheets PDF



Part Number SGM2301
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SGM2301 DatasheetSGM2301 Datasheet (PDF)

Elektronische Bauelemente SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SGM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Surface Mount Device * Simple Drive Requirement D G S Absolute Maximum .

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Elektronische Bauelemente SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SGM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SGM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Surface Mount Device * Simple Drive Requirement D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings -20 ±12 -2.6 -2.1 -10 1.38 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 90 Unit oC /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp. Coefficient BVDS/ Tj Gate Threshold Voltage VGS(th) Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) IGSS IDSS Static Drain-Source On-Resistance2 RDS(ON) Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs Min. -20 _ -0.5 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Typ. _ -0.1 _ _ _ _ _ _ 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 4.4 Max. _ _ _ ±100 -1 -10 130 190 10 _ _ _ _ _ _ _ _ _ _ Unit Test Condition V V/ oC VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA V VDS=VGS, ID=-250uA nA VGS=±12V uA VDS=-20V,VGS=0 uA VDS=-16V,VGS=0 VGS=-5.0V, ID=-2.8A m VGS=-2.8V, ID=-2A ID=-2.8A nC VDS=-6.0V VGS=-5.0V VDS=-15V ID=-1A nS VGS=-10V RG=6 RD=15 VGS=0V pF VDS=-6V f=1.0MHz S VDS=-5V, ID=-2.8A Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Symbol VSD Is ISM Min. _ _ _ Typ. _ _ _ Max. -1.2 -1 -10 Unit V Test Condition IS=-1.6A, VGS=0V. A VD=VG=0V, VS=-1.2V G A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 Elektronische Bauelemente Characteristics Curve SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of http://www.SeCoSGmbH.com/ Reverse Diode 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 Elektronische Bauelemente SGM2301 -2.6A, -20V,RDS(ON) 130m P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4 .


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